A monolithically integrated InGaAs-InP p-i-n/JFET focal plane array

Author

Kim, Dong-Su ; Forrest, Stephen R. ; Lange, Michael J. ; Olsen, Gregory H. ; Kosonocky, Walter

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

8

Issue

4

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

566

Lastpage

568

Abstract

We describe a monolithic InGaAs-InP focal plane array for near-infrared imaging. The array consists of an InGaAs p-i-n diode as a photodetector integrated with an InP junction field effect transistor (JFET) as a switching element for each pixel. In order to minimize the drain and gate leakage to achieve high-detection sensitivity, a novel -p-encapsulation" JFET was employed. Arrays as large as 16/spl times/16 were fabricated, consisting of 528 devices integrated into a single array with >99% individual device yield. This array represents significant progress in InP-based materials and integration technologies.

Keywords

III-V semiconductors; JFET integrated circuits; electro-optical switches; focal planes; gallium arsenide; indium compounds; infrared imaging; integrated optoelectronics; p-i-n photodiodes; photodetectors; semiconductor switches; sensitivity; InGaAs p-i-n diode; InGaAs-InP; InGaAs-InP p-i-n/JFET focal plane array; InP junction field effect transistor; InP-based materials; gate leakage; high-detection sensitivity; individual device yield; integration technologies; monolithically integrated; near-infrared imaging; p-encapsulation JFET; photodetector; pixel; single array; switching element; Detectors; FETs; Gate leakage; Indium gallium arsenide; Indium phosphide; Infrared imaging; Multiplexing; Optical imaging; PIN photodiodes; Photodetectors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.491228

Filename

491228