A Dual Workfunction Gate for Thin-Gate-Insulator Schottky-Barrier MOSFETs

Author

Shih, Chun-Hsing ; Yeh, Sheng-Pin

Author_Institution

Dept. of Electr. Eng., Yuan Ze Univ., Taoyuan

Volume

55

Issue

9

fYear

2008

Firstpage

2521

Lastpage

2525

Abstract

A dual workfunction gate (DWG) is proposed for the thin-gate-insulator Schottky-barrier MOSFETs (SBMOS) to adjust the barrier distributions by self-aligned tilt-angle implantation. Effects of DWG on SBMOS are investigated using 2-D simulations. Against junction engineering by dopant segregation, as the gate insulator scaled, the stronger gate coupling from DWG can both improve the on-state barrier lowering for electron and enhance the off-state barrier widening for hole. By using DWG architecture, SBMOS can be successfully scaled with thinner gate insulator as the promising candidate for next-generation CMOS devices.

Keywords

MOSFET; Schottky barriers; Schottky gate field effect transistors; work function; dual workfunction gate; self-aligned tilt-angle implantation; thin-gate-insulator Schottky-barrier MOSFET; CMOS technology; Charge carrier processes; Contact resistance; Insulation; Leakage current; MOSFETs; Numerical simulation; Power engineering and energy; Silicidation; Tunneling; Dopant segregation; Schottky-barrier MOSFETs (SBMOS); dual workfunction gate (DWG); thin gate insulator;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.927661

Filename

4603182