Ion implanted camel diodes fabricated on high resistivity silicon for microwave and millimetre-wave applications

An ion implanted n⁺-n^--p⁺-n⁺ bulk unipolar camel diode on a high resistivity silicon substrate has been designed and fabricated. The bulk unipolar diode characteristics have successfully demonstrated with barrier height of 0.69 V and ideality factor of 1.7. Using multi-implantation process alone to form the layer structure significantly reduces the device unit cost. To the best of the authors´ knowledge this is the first fully ion implanted camel diode reported on high resistivity silicon