Title :
High-speed Ga0.47In0.53As/InP infra-red Schottky-barrier photodiodes
Author :
Kim, Jung-Ho ; Li, S.S. ; Figueroa, L. ; Carruthers, T.F. ; Wagner, Raymond S.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
fDate :
8/18/1988 12:00:00 AM
Abstract :
The authors report a new high-speed InP-based Ga1-xIn xAs infra-red Schottky-barrier photodiode. The photodiodes were fabricated on both p- and n-GaInAs epilayers using Schottky barrier height enhancement technology. The response speed was measured by the impulse response and autocorrelation method; the risetimes of 85 ps for p-GaInAs and 180 ps for n-GaInAs photodiodes were obtained, which correspond to the 3 dB cutoff frequency of 2-4 GHz. The intrinsic response speed was 12 GHz for n-GaInAs and 18 GHz for p-GaInAs photodiodes based on SPICE simulation with measured device parameters. The photodiodes had the responsivity as high as 0.55 A/W and the quantum efficiency of up to 45% at 1.3-1.6 μm without antireflection coating
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; optical communication equipment; photodetectors; photodiodes; 1.3 to 1.6 micron; 12 GHz; 18 GHz; 180 ps; 2 to 4 GHz; 45 percent; 85 ps; Ga0.47In0.53As-InP; III-V semiconductors; IR type; SPICE simulation; Schottky barrier height enhancement technology; Schottky-barrier photodiodes; cutoff frequency; high-speed; infra-red; intrinsic response speed; long-wavelength photodetectors; mesa type; n-type GaInAs epilayer; p-type GaInAs epilayer; quantum efficiency; responsivity; risetimes;
Journal_Title :
Electronics Letters
