Title :
Observation of mobility enhancement in ultrathin SOI MOSFETs
Author :
Yoshimi, M. ; Hazama, H. ; Takahashi, M. ; Kambayashi, S. ; Tango, H.
Author_Institution :
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
fDate :
8/18/1988 12:00:00 AM
Abstract :
The mobility in n-channel SOI MOSFETs exhibits a significant increase as the SOI film becomes thinner than 1000 Å. At a 500 Å SOI thickness, the mobility values are distributed in the 700-1100 cm2/Vs range, which are obviously higher than the value in a bulk MOSFET having an identical doping concentration. The observed mobility enhancement has been explained by a decrease in the vertical electric field, associated with the complete depletion of the SOI film
Keywords :
carrier mobility; insulated gate field effect transistors; 500 to 1000 A; Si; complete depletion; mobility enhancement; n-channel; ultrathin SOI MOSFETs; vertical electric field reduction;
Journal_Title :
Electronics Letters
