• DocumentCode
    84170
  • Title

    Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2−x Interfacial Layer to Metal/Ge Contact

  • Author

    Gwang-Sik Kim ; Jeong-Kyu Kim ; Seung-Hwan Kim ; Jaesung Jo ; Changhwan Shin ; Jin-Hong Park ; Saraswat, Krishna C. ; Hyun-Yong Yu

  • Author_Institution
    Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
  • Volume
    35
  • Issue
    11
  • fYear
    2014
  • fDate
    Nov. 2014
  • Firstpage
    1076
  • Lastpage
    1078
  • Abstract
    We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO2-x heavily doped interfacial layer to metal/semiconductor contact to overcome a Fermi-level pinning problem on germanium (Ge). A specific contact resistivity of 3.16 × 10-3Ω · cm2 on moderately doped n-type Ge substrate (6 × 1016cm-3) was achieved, exhibiting ×584 reduction from Ti/Ge structure, and ×11 reduction from Ti/undoped TiO2/Ge structure. A novel doping technique for TiO2 interfacial layer at low temperature using Ar plasma was presented to lower S/D contact resistance in Ge n-MOSFET.
  • Keywords
    Fermi level; MIS structures; argon; contact resistance; elemental semiconductors; germanium; plasma materials processing; semiconductor doping; titanium compounds; Fermi-level pinning problem; Ge; MIS structure; S-D contact resistance; TiO2-x; argon plasma-treated heavily doped interfacial layer; doping technique; low temperature; metal-germanium contact; metal-semiconductor contact; n-MOSFET; specific contact resistivity reduction; Conductivity; Doping; Metals; Plasmas; Schottky barriers; Substrates; Tunneling; Ar plasma; Fermi-level unpinning; germanium; specific contact resistivity; titanium dioxide;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2014.2354679
  • Filename
    6908990
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=84170