Title :
High-efficiency Ku-band HBT amplifier with 1 W CW output power
Author :
Bartusiak, P. ; Henderson, Tim ; Kim, T. ; Khatibzadeh, A. ; Bayraktaroglu, B.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A compact, high-voltage AlGaAs/GaAs HBT was developed for applications in the Ku band using carbon-doped base structures. A single unit-cell device, operating under common-emitter mode and 10 V collector bias, produced 1.0 W CW output power at 15 GHz with 5.0 dB gain and 42% power-added efficiency. The power density of the device was a record 5.6 W/mm of emitter length.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; power amplifiers; solid-state microwave circuits; solid-state microwave devices; 1 W; 10 V; 15 GHz; 42 percent; 5 dB; Ku band; SHF; collector bias; common-emitter mode; output power; power density; power-added efficiency; semiconductors; single unit-cell device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911354
