High-Temperature High-Power Operation of GaInNAs Laser Diodes in the 1220–1240-nm Wavelength Range

Author

Bisping, D. ; Pucicki, D. ; Höfling, S. ; Habermann, S. ; Ewert, D. ; Fischer, M. ; Koeth, J. ; Forchel, A.

Author_Institution

Wurzburg Technische Phys., Wurzburg

Volume

20

Issue

21

fYear

2008

Firstpage

1766

Lastpage

1768

Abstract

We report on the high-temperature performance of high-power GalnNAs broad area laser diodes with different waveguide designs emitting in the 1220-1240-nm wavelength range. Large optical cavity laser structures enable a maximum continuous-wave output power of >8.9 W at T = 20degC with emission at 1220 nm and are characterized by low internal losses of 0.5 cm^-1 compared to 2.9 cm^-1 for the conventional waveguide structures. High-power operation up to temperatures of 120deg C is observed with output powers of >4 W at T = 90degC. This laser diode showed characteristic temperatures of T_o = 112 K and T₁ = 378 K.

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser beams; quantum well lasers; waveguide lasers; GaInNAs; broad area laser diodes; high-temperature high-power operation; internal losses; optical cavity laser structures; temperature 112 K; temperature 120 degC; temperature 20 degC; temperature 378 K; temperature 90 degC; wavelength 1220 nm to 1240 nm; Continuous-wave (CW) lasers; gallium compounds; lasers; nitrogen compounds; optical pumping; quantum-well (QW) lasers; semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2003414

Filename

4604690