DocumentCode
841899
Title
Intrinsic limitation of transconductance in extremely short silicon MOS transistors
Author
Ghibaudo, Gerard
Author_Institution
Sachs & Freeman Associates Inc., Landover, MD
Volume
24
Issue
17
fYear
1988
fDate
8/18/1988 12:00:00 AM
Firstpage
1113
Lastpage
1114
Abstract
An analysis of the limitation of transconductance by nonstationary transport in extremely short silicon MOS transistors is presented. It is shown using a dynamic Boltzmann transport approach that the transconductance should saturate when reducing the device length to some fraction of the mean free path. In silicon, this limit is found to range around 0.03-0.04 μm for devices operating at 77 K
Keywords
elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; 0.03 to 0.04 micron; 77 K; Si; analysis; dynamic Boltzmann transport approach; extremely short Si MOS transistors; fraction of mean free path; intrinsic limitation of transconductance; modelling; nonstationary transport; scaling limit; short channel MOSFETs; transconductance saturation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191772
Link To Document