DocumentCode
841972
Title
Digital integrated circuit using GaInAs/InP heterojunction bipolar transistors
Author
Topham, P.J. ; Thompson, John ; Griffith, Isaac ; Hollis, B.A. ; Hiams, N.A. ; Parton, J.G. ; Goodfellow, R.C.
Author_Institution
Plessey Res. Caswell Ltd., Allen Clark Res. Centre, Towcester, UK
Volume
25
Issue
17
fYear
1989
Firstpage
1116
Lastpage
1117
Abstract
A divider circuit using GaInAs/InP heterojunction bipolar transistors is reported for the first time. This is the first monolithic digital integrated circuit using these devices. The divider has been clocked at 5 GHz, which is the fastest toggle rate for a bipolar circuit on InP.
Keywords
III-V semiconductors; bipolar integrated circuits; digital integrated circuits; emitter-coupled logic; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated logic circuits; 5 GHz; ECL; GaInAs-InP; HBT; III-V semiconductors; divider circuit; heterojunction bipolar transistors; logic circuits; monolithic digital integrated circuit; toggle rate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890749
Filename
41901
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