DocumentCode :
842037
Title :
High-frequency performance of MOVPE npn AlGaAs/GaAs heterojunction bipolar transistors
Author :
Enquist, P.M. ; Hutchby, J.A. ; Chang, M.F. ; Asbeck, P.M. ; Sheng, N.H. ; Higgins, J.A.
Author_Institution :
Research Triangle Inst., Research Triangle Park, NC, USA
Volume :
25
Issue :
17
fYear :
1989
Firstpage :
1124
Lastpage :
1125
Abstract :
Base doping densities near 1020 cm-3 and emitter doping densities near 7*1017 cm-3 have been achieved in MOVPE HBT structures and combined with self-aligned processing resulting in fmax=94 GHz and ft=45 GHz. To the authors´ knowledge, these are the first MOVPE HBTs demonstrated to operate at millimetre-wave frequencies.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; vapour phase epitaxial growth; EHF; HF performance; III-V semiconductors; MM-wave operation; MOVPE HBT structures; heterojunction bipolar transistors; microwave device; millimetre-wave frequencies; n-p-n device; self-aligned processing;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890755
Filename :
41907
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=842037
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