• DocumentCode
    842049
  • Title

    Molecular-beam growth of homoepitaxial InSb photovoltaic detectors

  • Author

    Ashley, T. ; Elliott, C.T. ; McConville, C.F. ; Whitehouse, C.R.

  • Author_Institution
    R. Signals & Radar Establ., Great Malvern
  • Volume
    24
  • Issue
    20
  • fYear
    1988
  • fDate
    9/29/1988 12:00:00 AM
  • Firstpage
    1270
  • Lastpage
    1272
  • Abstract
    Molecular-beam epitaxy has been used for the first time to fabricate np junctions in InSb grown onto p-type InSb (100) substrates. Diodes formed by the epitaxial growth of a silicon-doped layer on undoped homoepitaxial material exhibited a bulk generation-recombination-limited R0A value of 105 Ω cm2 and Dλpk * of 3×1012 cm Hz1/2 W-1 at liquid nitrogen temperature
  • Keywords
    indium antimonide; molecular beam epitaxial growth; photodetectors; semiconductor epitaxial layers; semiconductor growth; InSb; MBE; bulk generation-recombination-limited; epitaxial growth; liquid nitrogen temperature; np junctions; photovoltaic detectors; undoped homoepitaxial material;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191792
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842049