Title :
Molecular-beam growth of homoepitaxial InSb photovoltaic detectors
Author :
Ashley, T. ; Elliott, C.T. ; McConville, C.F. ; Whitehouse, C.R.
Author_Institution :
R. Signals & Radar Establ., Great Malvern
fDate :
9/29/1988 12:00:00 AM
Abstract :
Molecular-beam epitaxy has been used for the first time to fabricate np junctions in InSb grown onto p-type InSb (100) substrates. Diodes formed by the epitaxial growth of a silicon-doped layer on undoped homoepitaxial material exhibited a bulk generation-recombination-limited R0A value of 105 Ω cm2 and Dλpk * of 3×1012 cm Hz1/2 W-1 at liquid nitrogen temperature
Keywords :
indium antimonide; molecular beam epitaxial growth; photodetectors; semiconductor epitaxial layers; semiconductor growth; InSb; MBE; bulk generation-recombination-limited; epitaxial growth; liquid nitrogen temperature; np junctions; photovoltaic detectors; undoped homoepitaxial material;
Journal_Title :
Electronics Letters
