DocumentCode
842071
Title
Scaling `ballistic´ heterojunction bipolar transistors
Author
Levi, A.F.J.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ
Volume
24
Issue
20
fYear
1988
fDate
9/29/1988 12:00:00 AM
Firstpage
1273
Lastpage
1275
Abstract
Reducing length scales in npn heterojunction bipolar transistors leads to unexpected changes in the fundamental limits of device performance. Very high p -type carrier concentrations in the base result in a reduced inelastic electron scattering rate. In addition, there exists a maximum base/collector bias above which ballistic collector transport is not possible, and correct scaling requires the n -type collector contact to be unusually heavily doped
Keywords
bipolar transistors; ballistic collector transport; base/collector bias; device performance; heavily doped; length scales; n-type collector contact; npn heterojunction bipolar transistors; p-type carrier concentrations; reduced inelastic electron scattering rate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191794
Link To Document