DocumentCode
842098
Title
Amplification of mode-locked semiconductor diode laser pulses in erbium-doped fibre amplifier
Author
Baker, R.A. ; Byron, K.C. ; Burns, Dave ; Sibbett, W.
Author_Institution
STC Technol. Ltd., Harlow, UK
Volume
25
Issue
17
fYear
1989
Firstpage
1131
Lastpage
1133
Abstract
Amplification of picosecond pulses from an actively mode-locked semiconductor diode laser in an erbium-doped fibre amplifier pumped at 532 nm is demonstrated. Peak emission was centred on 1.536 mu m and a saturated amplifier gain of 13 dB yielded less than 10 ps pulses with a peak power of 0.58 W at 600 MHz. Optimisation of the mode-locked oscillator allowed amplified peak pulse powers greater than 3 W to be generated.
Keywords
erbium; laser mode locking; laser transitions; optical fibres; semiconductor junction lasers; solid lasers; 0.58 W; 1.536 micron; 10 ps; 13 dB; 3 W; 532 nm; 600 MHz; Er 3+ doped fibre amplifier; actively mode-locked; amplified peak pulse powers; picosecond pulses; saturated amplifier gain; semiconductor diode laser; solid lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890760
Filename
41911
Link To Document