DocumentCode :
842101
Title :
Thermal stresses in aluminum lines bounded to substrates
Author :
Sauter, Anne I. ; Nix, William D.
Author_Institution :
Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA
Volume :
15
Issue :
4
fYear :
1992
fDate :
8/1/1992 12:00:00 AM
Firstpage :
594
Lastpage :
600
Abstract :
Thermal stresses in unpassivated and passivated aluminum thin-film lines bonded to substrates have been calculated using finite-element techniques. For the unpassivated lines, only elastic behavior was considered. The stresses were found to increase with increasing linewidth and with increasing substrate rigidity. Edge effects were found to become nonnegligible for narrow lines. For passivated lines, allowed to deform either elastically or in elastic perfectly plastic manner, the stresses increase with decreasing linewidth, with increasing passivation thickness, and with increasing passivation stiffness. Stresses in elastic perfectly plastic lines are slightly lower and have flatter profiles than stresses in purely elastic lines
Keywords :
aluminium; finite element analysis; metallic thin films; metallisation; passivation; reliability; thermal stresses; Al metallisation; Al thin film lines; Al-Si; BSG passivation; P2O5-SiO2-Al-Si; PSG-Al-Si; Si substrates; Si3N4 passivation; Si3N4-Al-Si; SiO2 passivation; SiO2-Al-Si; linewidth; narrow lines; passivated lines; passivation stiffness; passivation thickness; substrate rigidity; Aluminum; Bonding; Finite element methods; Passivation; Plastic films; Semiconductor films; Substrates; Thermal expansion; Thermal stresses; Thin film circuits;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/33.159891
Filename :
159891
Link To Document :
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