Title :
Modulation-doped (AlGa)As/GaAs quantum well structure with high electron sheet density
Author :
Powell, A. ; Roberts, Jeffrey S. ; Rockett, P.I. ; Foster, T.J. ; Eaves, L.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Abstract :
A single-sided modulation-doped 90 AA quantum well with Al0.45Ga0.55As barriers has been realised using metal-organic vapour-phase epitaxy with selenium doping. Hall effect measurements give a sheet carrier density ns=2.27*1012 cm-2 and a mobility mu =6050 cm2 V-1 s-1 at 300 K. At 4.2 K, Shubnikov-de Haas and quantum Hall effect measurements give ns=1.52*1012 cm-2 and mu =1.28*105 cm2 V-1 s-1. A persistent increase in ns to 2.00*1012 cm-2 is observed at 4.2 K by passing a large current through the sample for a short period of time.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; carrier mobility; gallium arsenide; high electron mobility transistors; quantum Hall effect; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; (AlGa)As/GaAs quantum well structure; 90 AA; Al 0.45Ga 0.55As:Se-GaAs; HEMT; III-V semiconductors; MODFET; MOVPE; Shubnikov-de Haas measurements; carrier mobility; electron sheet density; metal-organic vapour-phase epitaxy; modulation doped quantum well; quantum Hall effect measurements; sheet carrier density; single sided quantum well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890770
