DocumentCode
842299
Title
Ion-implanted planar pin diodes in InP/GaInAs layers grown on implanted InP:Fe
Author
Haussler, W. ; Romer, D. ; Bauer, J.G. ; Scherg, T.
Author_Institution
Siemens Res. Labs., Munchen, West Germany
Volume
25
Issue
17
fYear
1989
Firstpage
1158
Lastpage
1159
Abstract
The fabrication of planar pin diodes using InP/GaInAs layer growth on Si-implanted InP:Fe substrates and Be implantation is reported. Diodes with low leakage currents are obtained. At 10 V reverse bias and a diameter of 50 mu m, the authors measured 0.4 and 1.6 nA without and with substrate implant, respectively. The reverse characteristics show a strong dependence on the annealing conditions for the substrate implant.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; ion implantation; p-i-n diodes; 0.4 nA; 1.6 nA; 50 micron; Be implantation; IV-V semiconductors; InP:Be-GaInAs-InP:Fe,Si; InP:Fe,Si; Si-implanted InP:Fe substrates; annealing conditions; fabrication; low leakage currents; p-i-n diode; planar pin diodes; reverse characteristics; substrate implant;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890777
Filename
41928
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