DocumentCode
842383
Title
MgB2 thin films grown at different temperatures by hybrid physical-chemical vapor deposition
Author
Liu, B.T. ; Xi, X.X. ; Vaithyanathan, V. ; Schlom, D.G.
Author_Institution
Dept. of Phys., Pennsylvania State Univ., University Park, PA, USA
Volume
15
Issue
2
fYear
2005
fDate
6/1/2005 12:00:00 AM
Firstpage
3249
Lastpage
3252
Abstract
We have grown MgB2 films at different substrate temperatures by hybrid physical-chemical vapor deposition. X-ray diffraction analysis shows epitaxial growth at all temperatures, as measured at the substrate surface, between 550-700°C. An optimal deposition temperature was found around 650°C, at which the rocking curve is the narrowest, the residual resistivity is the lowest, and Tc is the highest. For the films deposited at lower temperatures, the rocking curve broadens, indicating a decreasing quality of crystallinity. The residual resistivity increases but the superconducting transition temperature remains nearly constant around 40 K when the deposition temperature is decreased to 550°C. The deposition of epitaxial films with excellent superconducting properties at low substrate temperatures is important for device and circuit processing utilizing MgB2.
Keywords
CVD coatings; X-ray diffraction; magnesium compounds; superconducting epitaxial layers; superconducting transition temperature; type II superconductors; vapour phase epitaxial growth; 550 to 700 C; MgB2; epitaxial growth; hybrid physical-chemical vapor deposition; magnesium diboride; residual resistivity; rocking curve; substrate temperatures; superconducting thin films; x-ray diffraction analysis; Chemical vapor deposition; Conductivity; Crystallization; Epitaxial growth; Substrates; Superconducting epitaxial layers; Superconducting films; Superconducting transition temperature; Temperature measurement; X-ray diffraction; Hybrid physical-chemical vapor deposition; magnesium diboride; substrate temperatures; thin films;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2005.848844
Filename
1440364
Link To Document