Radiation-Hardening Static NMOS Rams

The results of an effort to total-dose radiation harden N-channel static random-access-memories are described. Both an aluminum-gate and a silicon-gate process were hardened to a level greater than 104 rads(Si) on a semiconductor memory vendor´s production line. The aluminum-gate RAMs have been found to operate to well above 105 rads(Si) at low dose rates, suggesting their suitability for space applications.