Title :
Performance characteristics of (InAs)1/(GaAs)n short-period superlattice quantum-well laser
Author :
Dutta, N.K. ; Chand, Naresh ; Lopata, J. ; Wetzel, Randall
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The performance characteristics of (InAs)1/(GaAs)4 superlattice quantum well lasers are analysed both experimentally and theoretically. The measured threshold current density depends strongly on the number of periods in the superlattice structure. The radiative recombination rate and the gain against carrier density relationship in monolayer superlattice structures are calculated. The calculated threshold current density agrees well with the measured data. Laser emission has been observed at 1.23 mu m using an (InAs)1/(GaAs)2 superlattice active region.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; semiconductor lasers; semiconductor superlattices; InAs-GaAs; gain against carrier density relationship; monolayer superlattice structures; performance characteristics; radiative recombination rate; short-period superlattice quantum-well laser; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921497
