• DocumentCode
    842889
  • Title

    Comments on "Postbreakdown Current in MOS Structures: Extraction of Parameters Using the Integral Difference Function Method

  • Author

    Nadarajah, S.

  • Author_Institution
    Escola Tecnica Superior d´Enginyeria, Univ. Autonoma de Barcelona, Bellaterra
  • Volume
    6
  • Issue
    4
  • fYear
    2006
  • Firstpage
    575
  • Lastpage
    575
  • Abstract
    For original paper by E. Miranda see ibid. vol. 6, no. 2, p. 190-96, Jun. 2006
  • Keywords
    MIS structures; integro-differential equations; leakage currents; Lambert W function; MOS structures; integral difference function method; parameter extraction; postbreakdown current; ultrathin oxides; Circuit simulation; Computational modeling; Data analysis; Data mining; Embedded software; Equations; Leakage current; MOS devices; Packaging; Software packages;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2006.883945
  • Filename
    4020248