• DocumentCode
    84290
  • Title

    A 250-MHz 18-Mb Full Ternary CAM With Low-Voltage Matchline Sensing Scheme in 65-nm CMOS

  • Author

    Hayashi, Isao ; Amano, Tetsuo ; Watanabe, N. ; Yano, Yuichiro ; Kuroda, Yoshihiro ; Shirata, Masaya ; Dosaka, Katsumi ; Nii, Koji ; Noda, H. ; Kawai, Hiroyuki

  • Author_Institution
    Renesas Electron. Corp., Hitachinaka, Japan
  • Volume
    48
  • Issue
    11
  • fYear
    2013
  • fDate
    Nov. 2013
  • Firstpage
    2671
  • Lastpage
    2680
  • Abstract
    An 18-Mb full ternary CAM with low-voltage matchline sensing scheme (LVMLSS) is designed and fabricated in 65-nm bulk CMOS process. LVMLSS has three key techniques: voltage down converter, differential sense amplifier with matchline isolation, and reference voltage generation scheme. With these techniques, LVMLSS can reduce the dynamic power consumption of matchlines to 33% compared with conventional one and realizes 42% fast match-line sensing. At 1.0-V typical supply voltage, 250-MHz search frequency is achieved. The power consumption of fully paralleled search operation at 250 MHz is 9.3 W, which is 66% smaller than previous work. This work has realized high-speed, low-power, and robust large-scale TCAM. We believe that this work will greatly contribute to reducing the power of network systems.
  • Keywords
    CMOS integrated circuits; content-addressable storage; convertors; differential amplifiers; low-power electronics; reference circuits; bulk CMOS process; differential sense amplifier; dynamic power consumption; frequency 250 MHz; full ternary CAM; low-voltage matchline sensing scheme; matchline isolation; power 9.3 W; power consumption; reference voltage generation scheme; size 65 nm; ternary content-addressable memory; voltage 1.0 V; voltage down converter; Computer architecture; Discharges (electric); Noise; Power demand; Sensors; Timing; Transistors; Differential sense amplifier; low-voltage matchline; reference voltage generator; ternary content-addressable memory (TCAM); voltage down converter;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2013.2274888
  • Filename
    6579738