DocumentCode
842914
Title
A 150-MHz direct digital frequency synthesizer in 1.25-μm CMOS with -90-dBc spurious performance
Author
Nicholas, Henry T., III ; Samueli, Henry
Author_Institution
PairGain Technol., Torrance, CA, USA
Volume
26
Issue
12
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
1959
Lastpage
1969
Abstract
A monolithic CMOS direct digital frequency synthesizer (DDFS) is presented which simultaneously achieves high spectral purity and wide bandwidth. Phase noise of the output sine wave is equivalent to or better than that of the 150-MHz reference clock. The synthesizer covers a bandwidth from DC to 75 MHz in steps of 0.035 Hz with a switching speed of 6.7 ns and a tuning latency of 13 clock cycles. An efficient look-up table method for calculating the sine function reduces ROM storage requirements by a factor of 128:1. All circuit designs are fully static and are tolerant to transistor threshold shifts caused by radiation or process variations. The DDFS was fabricated in a 1.25-μm radiation-hardened double-level metal bulk P-well CMOS process which is tolerant to over 106 rd(Si) of total dose radiation. The die size is 195 mil×195 mil with a device count of 35,000 transistors. Power dissipation is 950 mW at a clock rate of 100 MHz
Keywords
CMOS integrated circuits; VLSI; digital integrated circuits; frequency synthesizers; function generators; radiation hardening (electronics); 0 to 150 MHz; 1.25 micron; 195 mil; 1E6 rad; 6.7 ns; 75 MHz; 950 mW; CMOS; DDFS; bandwidth; bulk P-well CMOS process; clock rate; device count; die size; direct digital frequency synthesizer; double-level metal; high spectral purity; look-up table; phase noise; radiation hardened CMOS; reduced ROM storage requirement; reference clock; sine function calculation; sinewave output; spurious performance; static circuits; switching speed; threshold shifts tolerant circuits; tuning latency; wide bandwidth; Bandwidth; CMOS process; Circuit optimization; Circuit synthesis; Clocks; Delay; Frequency synthesizers; Phase noise; Read only memory; Table lookup;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.104190
Filename
104190
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