UV-Enhanced a-Si:H Metal–Semiconductor–Metal Photodetector

Author

Khodami, Ida ; Taghibakhsh, Farhad ; Karim, Karim S.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Waterloo, ON

Volume

29

Issue

9

fYear

2008

Firstpage

1007

Lastpage

1010

Abstract

Planar metal-semiconductor-metal (MSM) photodetectors with very thin hydrogenated amorphous silicon (a-Si) films were fabricated for the detection of ultraviolet (UV) radiation. Since DNA and proteins strongly absorb UV radiation, these detectors find application in DNA and protein detection. The performance of top and bottom electrode MSM structures with aluminum electrodes is compared. The measured results include a responsivity of 150 mA/W and an external quantum efficiency of 74% at a wavelength of 260 nm for the top electrode configuration at a bias of 2 V/mum and a 10-mum finger spacing.

Keywords

DNA; biological effects of radiation; elemental semiconductors; macromolecules; metal-semiconductor-metal structures; photodetectors; proteins; silicon; ultraviolet detectors; ultraviolet radiation effects; DNA; UV radiation; aluminum electrodes; external quantum efficiency; finger spacing; hydrogenated amorphous silicon films; metal-semiconductor-metal photodetector; protein detection; ultraviolet radiation; Aluminum; Amorphous silicon; DNA; Electrodes; Photodetectors; Proteins; Radiation detectors; Semiconductor films; Silicon radiation detectors; Wavelength measurement; Amorphous silicon (a-Si); biomolecular imaging; metal–semiconductor–metal (MSM) photodetector; ultraviolet (UV) light detector;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2001634

Filename

4604843