20 Gb/s digital SSIs using AlGaAs/GaAs heterojunction bipolar transistors for future optical transmission systems

Author

Ichino, Haruhiko

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

28

Issue

2

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

115

Lastpage

122

Abstract

Design principles for achieving good eye opening and circuit optimization to extract high performance from AlGaAs/GaAs heterojunction bipolar transistor (HBT) devices are described. Using the circuit techniques and HBTs with an f_T of 70 GHz and an f_max of 50 GHz, four kinds of SSIs are developed for future optical transmission systems. High-bit-rate operation of over 20 Gb/s (26 GHz toggle flip-flop, 20 Gb/s decision circuit, 20 Gb/s EXCLUSIVE OR/NOR gate, and 28 Gb/s selector IC), extremely fast rise and fall times (20-80%) of 20 and 14 ps, respectively, and good eye opening are obtained. In addition, potential performance gains that might be realized through advanced circuit and device design are appraised, and throughputs as fast as 40 Gb/s are predicted

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital communication systems; digital integrated circuits; flip-flops; gallium arsenide; heterojunction bipolar transistors; integrated logic circuits; optical communication equipment; 14 ps; 20 Gbit/s; 20 ps; 26 to 70 GHz; 28 Gbit/s; AlGaAs-GaAs; EXCLUSIVE OR/NOR gate; HBTs; decision circuit; digital SSI; heterojunction bipolar transistors; logic gate; optical transmission systems; selector IC; toggle flip-flop; Application specific integrated circuits; Circuit optimization; Circuit synthesis; Gallium arsenide; Heterojunction bipolar transistors; High speed optical techniques; Logic circuits; Optical modulation; Throughput; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.192042

Filename

192042