• DocumentCode
    843403
  • Title

    Improvement of AlInP-AlGaInP MQW light-emitting diode by meshed contact layer

  • Author

    Wang, H.C. ; Su, Y.K. ; Lin, C.L. ; Chen, W.B. ; Chen, S.M.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    14
  • Issue
    11
  • fYear
    2002
  • Firstpage
    1491
  • Lastpage
    1493
  • Abstract
    The optical output power of the AlInP-AlGaInP light-emitting diodes was pronouncedly enhanced 1.45 times at 20 mA without degrading the electrical characteristics by introducing the meshed GaAs contact layer. Both theoretical simulation and experimental analysis were used to demonstrate the feasibility of the proposed structure.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; 20 mA; AlInP-AlGaInP; AlInP-AlGaInP MQW light-emitting diode; GaAs; electrical characteristics; meshed GaAs contact layer; meshed contact layer; optical output power; Absorption; Contact resistance; Current density; Degradation; Electric variables; Gallium arsenide; Indium tin oxide; Light emitting diodes; Quantum well devices; Transistors;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2002.803369
  • Filename
    1041979
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=843403