DocumentCode
843427
Title
A generalized tanh law MOSFET model and its applications to CMOS inverters
Author
Shousha, A.H.M. ; Aboulwafa, M.
Author_Institution
Dept. of Electr. Eng., United Arab Emirates Univ., Al-Ain, United Arab Emirates
Volume
28
Issue
2
fYear
1993
fDate
2/1/1993 12:00:00 AM
Firstpage
176
Lastpage
179
Abstract
A generalized tanh law model is proposed to simulate the current-voltage characteristics of both long-channel and short-channel MOS transistors. The proposed model is used to calculate the propagation delay, short-circuit power dissipation, and logic threshold voltage of CMOS inverters. The results obtained are in good agreement with those obtained using classical models
Keywords
CMOS integrated circuits; insulated gate field effect transistors; integrated logic circuits; semiconductor device models; CMOS inverters; MOS transistors; MOSFET model; current-voltage characteristics; generalized tanh law; logic threshold voltage; long-channel; propagation delay; short-channel; short-circuit power dissipation; CMOS logic circuits; Current measurement; Current-voltage characteristics; Helium; MOSFET circuits; Power dissipation; Propagation delay; Pulse inverters; Semiconductor device modeling; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.192052
Filename
192052
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