• DocumentCode
    843769
  • Title

    Analysis of parasitic effects for pin diode SPDT switch

  • Author

    Sun, P. ; Heo, D.

  • Author_Institution
    IBM, Essex Junction, VT
  • Volume
    45
  • Issue
    10
  • fYear
    2009
  • Firstpage
    503
  • Lastpage
    504
  • Abstract
    A comparison of insertion loss between a conventional clockwise and a proposed counter-clockwise SiGe pin diode SPDT switch based on an analysis of parasitic effects is presented. In a silicon-based process, the counter-clockwise switch is analytically demonstrated to have lower insertion loss than the clockwise switch owing to the alleviation of parasitic effects. Measurement data show good agreement with the presented analysis.
  • Keywords
    Ge-Si alloys; microwave switches; p-i-n diodes; semiconductor switches; SiGe; counter-clockwise pin diode SPDT switch; insertion loss; parasitic effects; silicon-based process;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.0691
  • Filename
    4913366
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=843769