Title :
0.18 μm 21-27 GHz CMOS UWB LNA with 9.3 ± 1.3 dB gain and 103.9 ± 8.1 ps group delay
Author :
Yang, H.-Y. ; Lin, Y.-S. ; Chen, C.-C.
Author_Institution :
Dept. of Electr. Eng., Nat. Chi Nan Univ., Puli
Abstract :
A 21-27 GHz CMOS ultra-wideband low-noise amplifier (UWB LNA) with state-of-the-art phase linearity property (group delay variation is only plusmn8.1 ps across the whole band) is reported for the first time. To achieve high and flat gain (S21) and small group delay variation at the same time, the inductive series peaking technique was adopted in the output of each stage for bandwidth enhancement. The LNA dissipated 27 mW power and achieved input return loss (S11) of -13 to -20.1 dB, output return loss (S22) of -8.2 to -30.2 dB, flat S21 of 9.3 plusmn 1.3 dB, reverse isolation (S12) of -52.7 to -73.3 dB, and noise figure of 4.9-6.1 dB over the 21-27 GHz band of interest. The measured 1 dB compression point (P1dB) and input third-order intermodulation point (IIP3) were -14 and -4 dBm, respectively, at 24 GHz.
Keywords :
CMOS integrated circuits; low noise amplifiers; wideband amplifiers; CMOS; compression point; frequency 21 GHz to 27 GHz; group delay; inductive series peaking technique; input return loss; input third-order intermodulation point; noise figure; output return loss; phase linearity property; reverse isolation; size 0.18 mum; ultra-wideband low-noise amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20081872