Data retention characteristics of sub-100 nm NAND flash memory cells

Author

Lee, Jae-Duk ; Choi, Jeong-Hyuk ; Park, Donggun ; Kim, Kinam

Author_Institution

Res. & Dev. Center, Samsung Electron. Co., Gyunggi, South Korea

Volume

24

Issue

12

fYear

2003

Firstpage

748

Lastpage

750

Abstract

In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells.

Keywords

CMOS memory circuits; NAND circuits; flash memories; interface states; leakage currents; tunnelling; Fowler-Nordheim stress; NAND flash memory cells; data retention characteristics; failure mechanism; interface states annihilation; interface trap; programmed cells; stress-induced leakage current; tunnel oxide degradation; Capacitors; Degradation; Dielectrics; Hot carriers; Hydrogen; Interface states; Leakage current; Research and development; Stress; Tungsten;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.820645

Filename

1254606