Explaining the parameters of the electron valence-band tunneling related Lorentzian noise in fully depleted SOI MOSFETs

Author

Simoen, E. ; Mercha, A. ; Rafi, J.M. ; Claeys, C. ; Lukyanchikova, N.B. ; Garbar, N.

Author_Institution

IMEC, Leuven, Belgium

Volume

24

Issue

12

fYear

2003

Firstpage

751

Lastpage

754

Abstract

The behavior of the Lorentzian noise overshoot time constant /spl tau/ and plateau amplitude is investigated in fully depleted silicon-on-insulator MOSFETs with the back gate in accumulation. It is shown that /spl tau/ is identical for long-channel nand p-MOSFETs in the gate overdrive voltage range studied. For shorter lengths (L = 0.12 μm), a slight reduction of /spl tau/ for the p-MOSFETs and an increase for the short n-MOSFETs has been found. The observations will be explained by considering both the injection of majority carriers in the floating body through electron valence-band tunneling and the dynamic resistance of the source-body and gate-body junction.

Keywords

MOSFET; charge injection; semiconductor device models; semiconductor device noise; silicon-on-insulator; tunnelling; valence bands; Lorentzian noise; back gate in accumulation; body-effect factor; dynamic resistance; electron valence-band tunneling related noise; floating body; fully depleted SOI MOSFET; gate-body junction; halo implantation; majority carriers injection; noise model; overshoot time constant; plateau amplitude; short-channel effects; source-body junction; Electrons; Hysteresis; Immune system; Low-frequency noise; MOSFET circuits; Noise measurement; Semiconductor device noise; Silicon on insulator technology; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.820644

Filename

1254607