1.5 μm λ/4 shifted multiple quantum well distributed feedback laser diodes

Author

Sasaki, T. ; Takano, Shigeru ; Henmi, N. ; Yamada, Hiroyoshi ; Kitamura, Masayuki ; Hasumi, H. ; Mito, I.

Author_Institution

Opto-Electron Res. Labs, NEC Corp., Kawasaki

Volume

24

Issue

23

fYear

1988

fDate

11/10/1988 12:00:00 AM

Firstpage

1408

Lastpage

1409

Abstract

1.5 μm λ/4 shifted multiple quantum well distributed feedback laser diodes have been achieved for the first time. A characteristic temperature value for a threshold current at around room temperature was as high as 88 K. Spectra at 0.9 times the threshold current showed substantial TM mode suppression. The MQW active region consists of four GaInAs wells (75 Å thick) and GaInAsP barriers (λ_g=1.15 μm, 150 Å thick) grown by metalorganic vapour phase epitaxy (MOVPE). 1.3 μm GaInAsP was grown as an optical guide layer

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; optical communication equipment; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 88 K; DFB laser; GaInAs-GaInAsP; III-V semiconductors; MOVPE; MQW active region; TM mode suppression; characteristic temperature value; distributed feedback laser diodes; metalorganic vapour phase epitaxy; multiple quantum well; one quarter wavelength shifted laser; room temperature; semiconductor lasers; single longitudinal mode operation; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

46073