Quantized Hall resistance measurements

Author

Kawaji, S. ; Nagashima, Naoki ; Kikuchi, Nobuyasu ; Wakabayashi, Junichi ; Ricketts, Brian W. ; Yoshihiro, Kazuo ; Kinoshita, Joji ; Inagaki, K. ; Yamanouchi, Chikako

Author_Institution

Dept. of Phys., Gakushuin Univ., Tokyo, Japan

Volume

38

Issue

2

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

270

Lastpage

275

Abstract

The quantized Hall resistances, R_H(4), of Si MOSFETs were measured at ≈0.5 K in a magnetic field of 15 T. The value of R_H(4) was determined in terms of the Commonwealth Scientific and Industrial Research Organization (CSIRO) realization of the SI ohm. A weighted mean of three determinations gave a value for the quantity R_H(4) of (6453.203,36(52)) Ω_SI-NML which can also be expressed as 6453.2(1.000,000,52(8)) Ω_SI-NML. This R_H(4) value gives a value for h/e² which is about 0.3 p.p.m. larger than the value for h/e² derived from the anomalous moment of the electron, using the quantum electrodynamics (QED) theory

Keywords

electric resistance measurement; elemental semiconductors; insulated gate field effect transistors; measurement standards; quantum Hall effect; silicon; units (measurement); 0.5 K; CSIRO; Commonwealth Scientific and Industrial Research Organization; MOSFET; SI ohm; Si; h/e²; measurement standards; measurement units; quantized Hall resistances; Copper; Electrical resistance measurement; Electrons; Laboratories; Magnetic field measurement; Magnetic moments; Physics; Quantum mechanics; Superconducting magnets; Wires;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.192286

Filename

192286