Title :
Quantized Hall resistance measurements
Author :
Kawaji, S. ; Nagashima, Naoki ; Kikuchi, Nobuyasu ; Wakabayashi, Junichi ; Ricketts, Brian W. ; Yoshihiro, Kazuo ; Kinoshita, Joji ; Inagaki, K. ; Yamanouchi, Chikako
Author_Institution :
Dept. of Phys., Gakushuin Univ., Tokyo, Japan
fDate :
4/1/1989 12:00:00 AM
Abstract :
The quantized Hall resistances, RH(4), of Si MOSFETs were measured at ≈0.5 K in a magnetic field of 15 T. The value of RH(4) was determined in terms of the Commonwealth Scientific and Industrial Research Organization (CSIRO) realization of the SI ohm. A weighted mean of three determinations gave a value for the quantity RH(4) of (6453.203,36(52)) ΩSI-NML which can also be expressed as 6453.2(1.000,000,52(8)) ΩSI-NML. This RH (4) value gives a value for h/e2 which is about 0.3 p.p.m. larger than the value for h/e2 derived from the anomalous moment of the electron, using the quantum electrodynamics (QED) theory
Keywords :
electric resistance measurement; elemental semiconductors; insulated gate field effect transistors; measurement standards; quantum Hall effect; silicon; units (measurement); 0.5 K; CSIRO; Commonwealth Scientific and Industrial Research Organization; MOSFET; SI ohm; Si; h/e2; measurement standards; measurement units; quantized Hall resistances; Copper; Electrical resistance measurement; Electrons; Laboratories; Magnetic field measurement; Magnetic moments; Physics; Quantum mechanics; Superconducting magnets; Wires;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
