Micromagnetic simulation of antiferromagnetic/ferromagnetic structures

Author

Suess, D. ; Schrefl, T. ; Scholz, W. ; Kim, J.-V. ; Stamps, R.L. ; Fidler, J.

Author_Institution

Vienna Univ. of Technol., Austria

Volume

38

Issue

5

fYear

2002

fDate

9/1/2002 12:00:00 AM

Firstpage

2397

Lastpage

2399

Abstract

A novel approach for solving the Landau-Lifshitz-Gilbert equation for antiferromagnets with the finite-element method is presented. The antiferromagnet is treated in a continuum theory which allows us to explore the domain structure on a mesoscopic length scale. The finite-element method is suitable to treat antiferromagnets with arbitrarily shaped grains as well as exchange coupled antiferromagnetic (AF)/ferromagnetic (F) structures. The change of the domain configuration in the antiferromagnet after the reversal of the ferromagnet leads to exchange bias in AF/F bilayers with perfectly compensated interfaces.

Keywords

antiferromagnetic materials; exchange interactions (electron); finite element analysis; interface magnetism; magnetic domains; magnetic hysteresis; magnetic thin films; magnetisation reversal; Heisenberg exchange energy; Landau-Lifshitz-Gilbert equation; antiferromagnetic/ferromagnetic structures; bilayers compensated interfaces; continuum theory; domain structure; exchange coupled structures; ferromagnet reversal; finite-element method; hysteresis loops; interface spins frustration; mesoscopic length scale; micromagnetic simulation; polycrystalline antiferromagnet; polycrystalline grains; spin flop coupling; Antiferromagnetic materials; Elementary particle exchange interactions; Equations; Finite element methods; Lattices; Magnetization processes; Micromagnetics; Nearest neighbor searches; Polarization; Transistors;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2002.803594

Filename

1042200