L-band LDMOS power amplifiers based on an inverse class-F architecture

Author

Lépine, Fabien ; Ådahl, Andreas ; Zirath, Herbert

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Gothenburg, Sweden

Volume

53

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

2007

Lastpage

2012

Abstract

Two inverse class-F power amplifiers (PAs) working at 1 and 1.8 GHz, respectively, have been developed. The PAs use an LDMOS transistor as an active element in order to generated high efficiency with high output power. The 1-GHz PA achieved a drain efficiency of 77.8% with 12.4 W of output power and the 1.8-GHz PA a drain efficiency of 60% with 13 W of output power. To our knowledge, these results represent the highest efficiency and output power for an inverse class-F PA based on a single LDMOS transistor working at these frequencies.

Keywords

MOSFET; UHF integrated circuits; UHF power amplifiers; 1 GHz; 1.8 GHz; 12.4 W; 13 W; L-band LDMOS power amplifiers; LDMOS transistor; drain efficiency; inverse class-F architecture; inverse class-F power amplifiers; quadrature phase-shift keying; Costs; High power amplifiers; Linearity; Phase shift keying; Power amplifiers; Power generation; Quadrature phase shift keying; Radio frequency; Radiofrequency amplifiers; Voltage; Class E; LDMOS; class F; high efficiency; inverse class F; power amplifier (PA); quadrature phase-shift keying (QPSK);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2005.848830

Filename

1440717