Title :
Raman characterisation of stress in recrystallised silicon-on-insulator
Author :
Peiyi Chen ; Zhijian Li
fDate :
11/10/1988 12:00:00 AM
Abstract :
Raman scattering measurements were carried out to characterise Si films deposited on SiO2-coated Si substrates and recrystallised by a graphite strip heater or Ar+ ion laser. The frequency downshifts of the Raman peaks demonstrate that the Si films are under tensile stress. The crystallinity of the recrystallised films is also discussed
Keywords :
Raman spectra of inorganic solids; elemental semiconductors; recrystallisation; semiconductor thin films; semiconductor-insulator boundaries; silicon; spectral line shift; stress effects; Ar+ ion laser; Raman peaks; Raman scattering measurements; Si-SiO2; crystallinity; elemental semiconductors; frequency downshifts; graphite strip heater; recrystallised films; tensile stress;
Journal_Title :
Electronics Letters
