40-Gb/s wide-band MMIC pHEMT modulator driver amplifiers designed with the real frequency technique

Author

Kerhervé, Eric ; Moreira, Cristian Pavao ; Jarry, Pierre ; Courcelle, Laurent

Author_Institution

IXL Lab. of Microelectron., Univ. of Bordeaux, Talence, France

Volume

53

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

2145

Lastpage

2152

Abstract

With the use GaAs pseudomorphic high electron-mobility transistor technology, the bandwidth performances of Cherry-Hooper driver amplifiers need to be improved. To fulfill these requirements, we propose an original driver circuit topology dedicated to 40-Gb/s optical communication systems. To flatten the transducer gain response of the circuit, passive networks have been added in the design. These networks have been optimized by means of the real frequency technique (RFT). A modified procedure of the classical RFT is introduced to perform the optimization in the presence of an overall resistive feedback.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; driver circuits; gallium arsenide; network topology; optical communication equipment; passive networks; wideband amplifiers; 40 Gbit/s; Cherry-Hooper driver amplifiers; GaAs; driver circuit topology; monolithic microwave integrated circuit; optical communication systems; pHEMT technology; passive networks; pseudomorphic high electron-mobility transistor; real frequency technique; resistive feedback; transducer gain response; wide-band MMIC pHEMT modulator driver amplifiers; Bandwidth; Broadband amplifiers; Circuit topology; Driver circuits; Frequency; Gallium arsenide; MMICs; Network topology; Optical amplifiers; PHEMTs; Driver amplifier; monolithic microwave integrated circuit (MMIC); real frequency technique (RFT); wide-band;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2005.848804

Filename

1440735