Dose Rate and Bias Effects on COTS Array CCDs Induce Dark Signals Increase

Author

Wang Zujun ; He Baoping ; Yao Zhibin ; Liu Minbo ; Sheng Jiangkun

Author_Institution

State Key Lab. of Intense Pulsed Radiat. Simulation & Effect, Northwest Inst. of Nucl. Technol., Xi´an, China

Volume

61

Issue

3

fYear

2014

fDate

Jun-14

Firstpage

1376

Lastpage

1380

Abstract

The experiments of dose rate and bias effects on commercial-off-the-shelf array charge-coupled devices (CCDs) are presented. The dark signal ( VD) is calculated with the output signal voltages measured at different integration times when no light is incident on the CCDs. The dark signal voltages ( VD) versus the total dose at the dose rates of 0.01, 0.1, 1.0, 10.0, and 50 rad(Si)/s are compared. Annealing tests are performed to eliminate the time-dependent effects. Degradation levels were found to depend on the dose rates. The CCDs are divided into two groups-with one group biased and the other unbiased during ⁶⁰Coγ irradiation. The biased CCDs are shown to degrade more severely than the unbiased CCDs.

Keywords

charge-coupled device circuits; nuclear electronics; Bias Effects; CCD induce dark signals; COTS array; annealing tests; commercial-off-the-shelf array charge-coupled devices; dark signal voltages; degradation levels; dose rate experiments; output signal voltages; time-dependent effects; Annealing; Arrays; Charge coupled devices; Degradation; Electron traps; Radiation effects; Voltage measurement; Array charge-coupled devices (CCDs); dark signal; dose rate; total dose;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2302038

Filename

6800141