Lateral-Current-Injection Type Membrane DFB Laser With Surface Grating

Author

Shindo, Takatoshi ; Futami, Mitsuaki ; Okumura, Takashi ; Osabe, Ryo ; Koguchi, T. ; Amemiya, Tomohiro ; Nishiyama, Naoto ; Arai, Shigehisa

Author_Institution

Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan

Volume

25

Issue

13

fYear

2013

fDate

1-Jul-13

Firstpage

1282

Lastpage

1285

Abstract

Toward the light source for on-chip interconnection, a current-injection-type membrane distributed feedback laser with a surface gating structure is demonstrated. In this device, 450-nm-thick GaInAsP/InP layers with lateral-current-injection structure prepared by a two step OMVPE regrowth-method is bonded on a host substrate by using Benzocyclobutene bonding process. A threshold current of I_th=11 mA is obtained with a cavity length of 300 μm and a stripe of 1 μm.

Keywords

Bragg gratings; III-V semiconductors; MOCVD; distributed feedback lasers; gallium arsenide; indium compounds; integrated optoelectronics; laser cavity resonators; light sources; membranes; optical interconnections; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; DFB laser; GaInAsP-InP; benzocyclobutene bonding process; cavity length; current 11 mA; distributed feedback laser; lateral-current-injection type membrane; light source; on-chip interconnection; size 1 mum; size 300 mum; size 450 nm; surface grating structure; threshold current; two-step OMVPE regrowth-method; Semiconductor laser; lateral-current-injection; membrane laser; surface grating structure;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2261980

Filename

6522516