Demonstration of Addressable Organic Resistive Memory Utilizing a PC-Interface Memory Cell Tester

Author

Cho, Byungjin ; Song, Sunghoon ; Ji, Yongsung ; Choi, Ho-Gil ; Ko, Heung Cho ; Lee, Jae-Suk ; Jung, Gun-Young ; Lee, Takhee

Author_Institution

Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

Volume

34

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

51

Lastpage

53

Abstract

We demonstrated nonvolatile 8 × 8 array organic memory devices utilizing a PC-interface memory cell tester. The organic memory devices composed of a Ag/poly(3-hexylthiophene-2,5-diyl) (P3HT)/p⁺ poly-Si structure exhibited excellent memory performance properties, including stable switching behavior, proper statistical distribution, and long retention time. We succeeded in independently addressing and reading the data in the memory cell array using the PC-interface memory cell tester, opening an avenue toward more realistic organic memory device applications.

Keywords

elemental semiconductors; integrated circuit testing; organic compounds; random-access storage; silicon; silver; statistical distributions; Ag-Si; PC-interface memory cell tester; addressable organic resistive memory; memory cell array; nonvolatile 8×8 array organic memory devices; p⁺-poly-silicon structure; silver-poly(3-hexylthiophene-2,5-diyl); stable switching behavior; statistical distribution; Arrays; Electrodes; Nonvolatile memory; Polymers; Resistance; Switches; Threshold voltage; Nonvolatile memory; PC interface; organic memory; resistive switching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2226231

Filename

6374641