• DocumentCode
    847133
  • Title

    Experimental Study on Breakdown of Mobility Universality in \\langle 100\\rangle -Directed (110)-Oriented pMOSFETs

  • Author

    Shimizu, Ken ; Tsutsui, Gen ; Januar, Doni ; Saraya, Takuya ; Hiramoto, Toshiro

  • Author_Institution
    Inst. of Ind. Sci. & the Collaborative Inst. of Nano Quantum Inf. Electron., Univ. of Tokyo, Meguro
  • Volume
    6
  • Issue
    3
  • fYear
    2007
  • fDate
    5/1/2007 12:00:00 AM
  • Firstpage
    358
  • Lastpage
    361
  • Abstract
    This paper describes experimental determination of the value of eta in (110)-oriented SOI pMOSFETs by changing the SOI thickness and temperature. It is found for the first time that in the case of a lang100rang-directed channel, eta should be larger than unity, which implies the collapse of the mobility universality, when temperature is low or SOI thickness is ultimately thin. Possible mechanisms of the breakdown of the mobility universality are discussed
  • Keywords
    MOSFET; electric breakdown; hole mobility; silicon-on-insulator; (110)-oriented pMOSFETs; SOI pMOSFET; directed channel; hole mobility; mobility universality breakdown; CMOS technology; Educational programs; Educational technology; Electric breakdown; MOSFET circuits; Nanoelectronics; Particle scattering; Permittivity; Silicon; Temperature; Fully depleted SOI MOSFET; inversion layer mobility;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2007.894556
  • Filename
    4200737
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=847133