• DocumentCode
    847585
  • Title

    Performance dependence of InGaAs MSM photodetectors on barrier-enhancement layer structures

  • Author

    Sano, Eiichi ; Yoneyama, Mitsuru ; Enoki, Tsutomu ; Tamamura, T.

  • Author_Institution
    NTT LSI Labs., Atsugi, Japan
  • Volume
    28
  • Issue
    13
  • fYear
    1992
  • fDate
    6/18/1992 12:00:00 AM
  • Firstpage
    1220
  • Lastpage
    1221
  • Abstract
    The advantage of the graded superlattice layer over the abrupt junction is demonstrated for the continuous wave (CW) and pulse responses of InGaAs metal-semiconductor-metal photodetectors (MSM PDs). The measured pulsewidth of 44 ps for the 0.75 mu m MSM PD with the graded superlattice layer when corrected for the measurement system bandwidth implies an impulse response of 22 ps.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; semiconductor superlattices; 0.75 micron; 22 ps; InGaAs; MSM photodetectors; abrupt junction; barrier-enhancement layer structures; graded superlattice layer; metal-semiconductor-metal; pulse responses;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920770
  • Filename
    144346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=847585