Comparison of neutral electron trap generation by hot-carrier stress in n-MOSFET´s with oxide and oxynitride gate dielectrics

Author

Joshi, Aniruddha B. ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

13

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

360

Lastpage

362

Abstract

A comparative study of neutral electron-trap generation due to hot-carrier stress in n-MOSFETs with pure oxide, NH/sub 3/-nitrided oxide (RTN), and reoxidized nitrided oxide (RTN/RTO) as gate dielectrics is reported. Results show that neutral electron trap generation is considerably suppressed by nitridation and reoxidation. The nature of neutral traps is described based on the kinetics of trap filling by electron injection into the gate dielectrics immediately after channel hot-electron stress (CHES). Improved endurance of the RTN and RTN/RTO oxides is explained using physical models related to interfacial strain relaxation.<>

Keywords

dielectric thin films; electron traps; hot carriers; insulated gate field effect transistors; nitridation; oxidation; semiconductor device testing; stress relaxation; Si-SiO/sub 2/; Si-SiO/sub x/N/sub y/; channel hot-electron stress; hot-carrier stress; interfacial strain relaxation; n-MOSFETs; neutral electron trap generation; nitridation; oxide gate dielectrics; oxynitride gate dielectrics; physical models; reoxidation; reoxidized nitrided oxide; trap filling kinetics; Charge carrier processes; Degradation; Dielectrics; Electron traps; Filling; Hot carriers; Kinetic theory; MOSFET circuits; Stress control; Thermal stresses;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192755

Filename

192755