Backgating in submicrometer GaAs MESFET´s operated at high drain bias

Author

Harrison, Alan

Author_Institution

Bell-Northern Res. Ltd., Ottawa, Ont., Canada

Volume

13

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

381

Lastpage

383

Abstract

GaAs 0.8- mu m MESFETs were seen to exhibit an increased sensitivity to backgating when operated at drain voltages above 3.5 V. This is accompanied by an abrupt increase in the DC output conductance (kink effect) and an increase in the current flowing in the back-gate electrode. It is proposed that the increased sensitivity to backgating is due to the injection of holes, from the high-field region of the channel, into the semi-insulating substrate. The results suggest that conventional layout rules may not always be sufficient to avoid backgating in circuits based in submicrometer GaAs MESFETs.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; high field effects; semiconductor device testing; 0.8 micron; DC output conductance; GaAs; MESFETs; back-gate electrode; backgating; high drain bias; hole injection; kink effect; layout rules; semi-insulating substrate; short channel effects; Dielectric substrates; Dielectrics and electrical insulation; Electrodes; FETs; Gallium arsenide; Impact ionization; Implants; MESFET circuits; Passivation; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192762

Filename

192762