Determination of trapped oxide charge in flash EPROMs and MOSFETs with thin oxides

Author

San, K. Tamer ; Ma, Tso-Ping

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

Volume

13

Issue

8

fYear

1992

Firstpage

439

Lastpage

441

Abstract

A technique for determining the sign and the effective density of the trapped oxide charge near the junction transition region, based on the measurement of the gate-induced drain leakage (GIDL) current, is used to investigate the hot-carrier effects resulting from the erase operation and bit-line stress in flash EPROM devices. While the trapped oxide charge depends on the stress conditions, it has been found that a significant amount of hole trapping is likely when a sufficiently large potential difference exists between the gate and junction for either an abrupt or graded junction.<>

Keywords

EPROM; hole traps; hot carriers; insulated gate field effect transistors; interface electron states; leakage currents; GIDL current; MOSFET; abrupt junction; bit-line stress; erase operation; flash EPROM devices; gate-induced drain leakage; graded junction; hole trapping; hot-carrier effects; junction transition region; potential difference; thin oxides; trapped oxide charge; Channel hot electron injection; Charge measurement; Current measurement; Density measurement; EPROM; Electrodes; Lead compounds; MOSFETs; Stress measurement; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192784

Filename

192784