DocumentCode
848636
Title
Electromigration properties of electroless plated Cu metallization
Author
Kang, H.-K. ; Cho, J.S.H. ; Wong, S.S.
Author_Institution
Center for Integrated Syst., Sanford Univ., CA, USA
Volume
13
Issue
9
fYear
1992
Firstpage
448
Lastpage
450
Abstract
The electromigration properties of electroless plated copper films have been evaluated under DC stress conditions. The formation of microvoids and the diffusion of copper through the seed layer caused an increase of the line resistance in the initial stage of the stressing. The current density dependence and the activation energy of the lifetime were determined.<>
Keywords
copper; electroless deposited coatings; electromigration; metallic thin films; metallisation; voids (solid); DC stress conditions; current density dependence; diffusion; electroless plated Cu metallization; electromigration properties; lifetime activation energy; line resistance; microvoids; seed layer; Aluminum alloys; Copper; Current density; Electromigration; Etching; Metallization; Passivation; Semiconductor films; Stress; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.192790
Filename
192790
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