DocumentCode
848657
Title
Thermoelectric infrared sensors by CMOS technology
Author
Lenggenhager, René ; Baltes, Henry ; Peer, Jon ; Forster, Martin
Author_Institution
Phys. Electron. Lab., Inst. of Quantum Electron., Zurich, Switzerland
Volume
13
Issue
9
fYear
1992
Firstpage
454
Lastpage
456
Abstract
The authors report two integrated thermoelectric infrared sensors on thin silicon oxide/nitride microstructures realized by industrial CMOS IC technology, followed by one compatible single maskless anisotropic etching step. No additional material is needed to enhance infrared absorption since the passivation layer, as provided by the CMOS process, is sufficient for certain spectral bands. The responsivities are between 12 and 28 V/W.<>
Keywords
CMOS integrated circuits; etching; infrared detectors; integrated circuit technology; passivation; thermopiles; CMOS technology; SiO/sub 2/-Si/sub 3/N/sub 4/ microstructures; maskless anisotropic etching; passivation layer; responsivities; thermoelectric infrared sensors; Anisotropic magnetoresistance; CMOS integrated circuits; CMOS technology; Electromagnetic wave absorption; Etching; Infrared sensors; Infrared spectra; Microstructure; Silicon; Thermoelectricity;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.192792
Filename
192792
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