Improved hot-carrier immunity in CMOS analog device with N/sub 2/O-nitrided gate oxides

Author

Lo, G.Q. ; Ahn, J. ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

13

Issue

9

fYear

1992

Firstpage

457

Lastpage

459

Abstract

The authors report on the hot-carrier effects on analog device performance parameters in CMOS devices with N/sub 2/O-nitrided gate oxides. The hot-carrier-induced degradation has been studied in terms of drain output resistance, voltage gain, differential offset voltage, and voltage swings. Results show that, N/sub 2/O nitridation significantly improves the hot-carrier immunity in these aspects, especially for n-channel MOSFETs. Analog and digital device performance degradations have been compared.<>

Keywords

CMOS integrated circuits; hot carriers; insulated gate field effect transistors; integrated circuit technology; linear integrated circuits; nitridation; semiconductor device testing; CMOS analog device; N/sub 2/O nitrided gate oxide; SiO/sub x/N/sub y/; differential offset voltage; drain output resistance; hot-carrier immunity; hot-carrier-induced degradation; n-channel MOSFETs; nitridation; voltage gain; voltage swings; Argon; CMOS technology; Degradation; Dielectrics; Hot carrier effects; Hot carriers; MOSFET circuits; Stress control; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192793

Filename

192793