Diamond thin-film recessed gate field-effect transistors fabricated by electron cyclotron resonance plasma etching

Author

Grot, S.A. ; Gildenblat, G.Sh. ; Badzian, A.R.

Author_Institution

Pennsylvania State Univ., University Park, PA, USA

Volume

13

Issue

9

fYear

1992

Firstpage

462

Lastpage

464

Abstract

A new technique for etching boron-doped homoepitaxial diamond films was used to fabricate mesa-isolated recessed gate field-effect transistors that operate at temperatures up to 350 degrees C. The upper temperature range is limited by the gate leakage current. The room-temperature hole concentration and mobility of the diamond film active layer were 1.2*10/sup 13/ cm/sup -3/ and 280 cm/sup 2//V-s, respectively. The maximum transconductance was 87 mu S/mm at 200 degrees C.<>

Keywords

carrier density; carrier mobility; diamond; elemental semiconductors; insulated gate field effect transistors; sputter etching; 20 to 350 degC; 87 muS; C:B; C:B homoepitaxial films; MOSFET; active layer; diamond films; electron cyclotron resonance plasma etching; gate field-effect transistors; gate leakage current; hole concentration; hole mobility; maximum transconductance; mesa-isolated recessed; Boron; Cyclotrons; Electrons; Etching; FETs; Plasma applications; Plasma temperature; Resonance; Semiconductor films; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192795

Filename

192795