High-quality MNS capacitors prepared by jet vapor deposition at room temperature

Author

Wang, Dechang ; Ma, Tso-Ping ; Golz, John W. ; Halpern, Bret L. ; Schmitt, Jerome J.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

Volume

13

Issue

9

fYear

1992

Firstpage

482

Lastpage

484

Abstract

The properties of metal-nitride-Si (MNS) capacitors in which the silicon nitride layer is produced by the jet vapor deposition (JVD) technique at room temperature are reported. Despite the room-temperature deposition, the electrical properties of these devices are far better than any previously reported MNS capacitors. Especially remarkable is the low density of interface traps (D/sub it/<5*10/sup 10//cm/sup 2/-eV near midgap). In addition, these MNS capacitors are highly resistant to damage caused by hot electrons and ionizing radiation.<>

Keywords

X-ray effects; aluminium; hot carriers; interface electron states; metal-insulator-semiconductor devices; plasma CVD; silicon; silicon compounds; Al-Si/sub 3/N/sub 4/-Si; MNS capacitors; electrical properties; hot electron damage; interface trap density; ionizing radiation damage; jet vapor deposition; room-temperature deposition; Annealing; Capacitors; Chemical vapor deposition; Dielectric thin films; Etching; Plasma temperature; Silicon; Sputtering; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192802

Filename

192802